hz-l series silicon epitaxial planar zener diode for low noise application ade-208-118a(z) rev 1 features ? diode noise level of this series is approximately 1/3-1/10 lower than the hz series. ? low leakage, low zener impedance and maximum power dissipation of 400 mw are ideally suited for stabilized power supply, etc. ? wide spectrum from 5.2v through 38v of zener voltage provide flexible application. ordering information type no. mark package code hz-l series type no. do-35 outline 1. cathode
2. anode 7
b 2 cathode band type no. 1 2 body color is orange
hz-l series 2 absolute maximum ratings (ta = 25c) item symbol value unit power dissipation pd 400 mw junction temperature tj 175 c storage temperature tstg -55 to +175 c electrical characteristics (ta = 25c) zener voltage reverese current dynamic resistance v z (v)* 1 test condition i r ( m m a) test condition r d ( w w ) test condition type grade min max i z (ma) max v r (v) max i z (ma) hz6l a1 5.2 5.5 0.5 1 2.0 150 0.5 a2 5.3 5.6 a3 5.4 5.7 b1 5.5 5.8 80 0.5 b2 5.6 5.9 b3 5.7 6.0 c1 5.8 6.1 60 0.5 c2 6.0 6.3 c3 6.1 6.4 hz7l a1 6.3 6.6 0.5 1 3.5 60 0.5 a2 6.4 6.7 a3 6.6 6.9 b1 6.7 7.0 b2 6.9 7.2 b3 7.0 7.3 c1 7.2 7.6 c2 7.3 7.7 c3 7.5 7.9 hz9l a1 7.7 8.1 0.5 1 6.0 60 0.5 a2 7.9 8.3 a3 8.1 8.5 note: 1. tested with dc.
hz-l series 3 zener voltage reverese current dynamic resistance v z (v)* 1 test condition i r ( m m a) test condition r d ( w w ) test condition type grade min max i z (ma) max v r (v) max i z (ma) hz9l b1 8.3 8.7 0.5 1 6.0 60 0.5 b2 8.5 8.9 b3 8.7 9.1 c1 8.9 9.3 c2 9.1 9.5 c3 9.3 9.7 hz11l a1 9.5 9.9 0.5 1 8.0 80 0.5 a2 9.7 10.1 a3 9.9 10.3 b1 10.2 10.6 b2 10.4 10.8 b3 10.7 11.1 c1 10.9 11.3 c2 11.1 11.6 c3 11.4 11.9 hz12l a1 11.6 12.1 0.5 1 10.5 80 0.5 a2 11.9 12.4 a3 12.2 12.7 b1 12.4 12.9 b2 12.6 13.1 b3 12.9 13.4 c1 13.2 13.7 c2 13.5 14.0 c3 13.8 14.3 hz15l 1 14.1 14.7 0.5 1 13.0 80 0.5 2 14.5 15.1 3 14.9 15.5 hz16l 1 15.3 15.9 0.5 1 14.0 80 0.5 2 15.7 16.5 3 16.3 17.1 note: 1. tested with dc.
hz-l series 4 zener voltage reverese current dynamic resistance v z (v)* 1 test condition i r ( m m a) test condition r d ( w w ) test condition type grade min max i z (ma) max v r (v) max i z (ma) hz18l 1 16.9 17.7 0.5 1 15.0 80 0.5 2 17.5 18.3 3 18.1 19.0 hz20l 1 18.8 19.7 0.5 1 18.0 100 0.5 2 19.5 20.4 3 20.2 21.1 HZ22L 1 20.9 21.9 0.5 1 20.0 100 0.5 2 21.6 22.6 3 22.3 23.3 hz24l 1 22.9 24.0 0.5 1 22.0 120 0.5 2 23.6 24.7 3 24.3 25.5 hz27l 1 25.2 26.6 0.5 1 24.0 150 0.5 2 26.2 27.6 3 27.2 28.6 hz30l 1 28.2 29.6 0.5 1 27.0 200 0.5 2 29.2 30.6 3 30.2 31.6 hz33l 1 31.2 32.6 0.5 1 30.0 250 0.5 2 32.2 33.6 3 33.2 34.6 hz36l 1 34.2 35.7 0.5 1 33.0 300 0.5 2 35.3 36.8 3 36.4 38.0 note: 1. tested with dc. note: 2. type no. is as follows; hz6a1l, hz6a2l, hz36-3l
hz-l series 5 main characteristic zener voltage v (v) z zener current i (a) z 5 10 15 20 25 30 35 40 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 10 -8 0 hz6b2l hz16-2l hz9b2l hz12b2l hz20-1l hz24-2l hz30-2l hz36-2l 0510 15 20 25 30 35 40 zener voltage v (v) 50 40 30 20 10 0 ?0 ?0 ?0 ?0 ?0 0.10 0.08 0.06 0.04 0.02 0 ?.02 ?.04 ?.06 ?.08 ?.10 z %/ c mv/ c 500 400 300 200 100 200 150 100 50 0 ambient temperature ta ( c) power dissipation p (mw) d 0 2.5 mm 3 mm printed circuit board
100 180 1.6t mm
quality: paper phenol l l=10mm l=5mm l=20mm
(publication value) fig.1 zener current vs.zener voltage fig.2 temperature coefficient vs.zener voltage fig.3 power dissipation vs.ambient temperature zener voltage
temperature coefficient (%/ c) z g zener voltage
temperature coefficient (mv/ c) z g
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